BFY50 DATASHEET PDF

BFY50 Transistor Datasheet pdf, BFY50 Equivalent. Parameters and Characteristics. BFY50 Datasheet, BFY50 NPN General Purpose Transistor Datasheet, buy BFY50 Transistor. BFY50 datasheet, BFY50 circuit, BFY50 data sheet: PHILIPS – NPN medium power transistors,alldatasheet, datasheet, Datasheet search site for Electronic.

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No liability will be accepted by the publisher for any consequence of its use. Low voltage NPN power Darlington transistor.

(PDF) BFY50 Datasheet download

Characteristic Symbol Rating Unit. Protection for Ethernet lines. Hotel Minsk Business Center, Bld. Designed for use in general purpose power amplifier and switching applications.

We make every effort to understand the difficulties More information.

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Product specification Supersedes data of Feb N-channel enhancement mode field-effect transistor Rev. This data sheet contains final product specifications. Suitable for applications requiring low noise and good h FE linearity, eg. All leads are isolated More information.

General description NPN general-purpose transistors.

High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications. Quick reference data Rev. To use this website, you must agree to our Privacy Policyincluding cookie policy.

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Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

NPN transistors Applications Audio, general purpose switching and amplifier transistors Description Datsheet devices are manufactured in Planar technology with More information.

BoxTelFax Belarus: Secondary protection for DSL lines. Philips Semiconductors Philippines Inc. Product specification IC24 Data Handbook. BZX series Voltage regulator diodes. Global Network Access International Access Rates We know that you need to communicate with your partners, colleagues and customers around the world. TDA Light datashret controller.

BB Low-voltage variable capacitance double diode. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7. Low dahasheet PNP power transistor. Benefit is lower component count, internal compensation for temperature and current gain spread.

General description PNP general-purpose transistors. They are designed for high speed.

SGS Thomson Microelectronics

Product data sheet Supersedes data of Oct Product specification Supersedes data of Sep Product specification Supersedes data of May This Datasheet is presented by the m anufacturer.

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They are designed for dtaasheet speed More information. V SCA54 All rights are reserved. Product data sheet Supersedes data of Jan Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

BFY50 데이터시트(PDF) – Seme LAB

High-speed switching No secondary breakdown. Exposure to limiting values for extended periods may affect device reliability. To make this website work, we log user data and share it with processors. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not dayasheet. Description in a plastic package using TrenchMOS technology.